Performance Degradations of MISFET-Based Hydrogen Sensors with a Pd-Ta<sub>2</sub>O<sub>5</sub>-SiO<sub>2</sub>-Si Structure During Long-Term Operation

Performance Degradations of MISFET-Based Hydrogen Sensors with a Pd-Ta<sub>2</sub>O<sub>5</sub>-SiO<sub>2</sub>-Si Structure During Long-Term Operation

We present the generalized experimental results of performance degradation of hydrogen sensors based on metal-insulator-semiconductor field effect transistor (MISFET)with the structure Pd-Ta<sub>2</sub>O<sub>5</sub>-SiO<sub>2</sub>-Si. The <i>n</i>-cha...

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Bibliographic Details
Main Authors: Boris Podlepetsky, Nikolay Samotaev, Marina Nikiforova, Andrew Kovalenko
Format: Article
Language:English
Published: MDPI AG 2019-04-01
Series:Sensors
Subjects:
hydrogen sensors
MISFET
Pd-Ta<sub>2</sub>O<sub>5</sub>-SiO<sub>2</sub>-Si
response parameters
hydrogen concentrations
time-dependence response instability
Online Access:https://www.mdpi.com/1424-8220/19/8/1855

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https://www.mdpi.com/1424-8220/19/8/1855

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