Engineering high aspect-ratio silicon nanostructures
Large-area high density vertical silicon nanowire arrays are fabricated by metal-assisted chemical etching. Two-dimensional silica colloidal crystal template or laser interference lithography are used to create gold metal nanohole arrays on a silicon substrate, which enables to precisely control th...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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Al-Farabi Kazakh National University
2023-11-01
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| Series: | Physical Sciences and Technology |
| Online Access: | https://phst.kaznu.kz/index.php/journal/article/view/344 |
| _version_ | 1797384535849041920 |
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| author | Ali Belarouci Roman Tkach Dmytro Averin |
| author_facet | Ali Belarouci Roman Tkach Dmytro Averin |
| author_sort | Ali Belarouci |
| collection | DOAJ |
| description |
Large-area high density vertical silicon nanowire arrays are fabricated by metal-assisted chemical etching. Two-dimensional silica colloidal crystal template or laser interference lithography are used to create gold metal nanohole arrays on a silicon substrate, which enables to precisely control the final diameter of the nanowires. The formation of ordered silicon nanowire arrays is due to selective and highly anisotropic etching of silicon induced by the gold patterned mask.
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| first_indexed | 2024-03-08T21:37:00Z |
| format | Article |
| id | doaj.art-36a3cea756c14fbb9c6bce3bd66265d9 |
| institution | Directory Open Access Journal |
| issn | 2409-6121 2522-1361 |
| language | English |
| last_indexed | 2024-03-08T21:37:00Z |
| publishDate | 2023-11-01 |
| publisher | Al-Farabi Kazakh National University |
| record_format | Article |
| series | Physical Sciences and Technology |
| spelling | doaj.art-36a3cea756c14fbb9c6bce3bd66265d92023-12-20T20:14:48ZengAl-Farabi Kazakh National UniversityPhysical Sciences and Technology2409-61212522-13612023-11-01103-410.26577/phst.2023.v10.i2.011Engineering high aspect-ratio silicon nanostructuresAli Belarouci0Roman Tkach1Dmytro Averin2Univ Lyon, Ecole Centrale de Lyon, INSA de Lyon, Université Claude Bernard LyonNational Technical University of Ukraine1Univ Lyon, Ecole Centrale de Lyon, INSA de Lyon, Université Claude Bernard Lyon Large-area high density vertical silicon nanowire arrays are fabricated by metal-assisted chemical etching. Two-dimensional silica colloidal crystal template or laser interference lithography are used to create gold metal nanohole arrays on a silicon substrate, which enables to precisely control the final diameter of the nanowires. The formation of ordered silicon nanowire arrays is due to selective and highly anisotropic etching of silicon induced by the gold patterned mask. https://phst.kaznu.kz/index.php/journal/article/view/344 |
| spellingShingle | Ali Belarouci Roman Tkach Dmytro Averin Engineering high aspect-ratio silicon nanostructures Physical Sciences and Technology |
| title | Engineering high aspect-ratio silicon nanostructures |
| title_full | Engineering high aspect-ratio silicon nanostructures |
| title_fullStr | Engineering high aspect-ratio silicon nanostructures |
| title_full_unstemmed | Engineering high aspect-ratio silicon nanostructures |
| title_short | Engineering high aspect-ratio silicon nanostructures |
| title_sort | engineering high aspect ratio silicon nanostructures |
| url | https://phst.kaznu.kz/index.php/journal/article/view/344 |
| work_keys_str_mv | AT alibelarouci engineeringhighaspectratiosiliconnanostructures AT romantkach engineeringhighaspectratiosiliconnanostructures AT dmytroaverin engineeringhighaspectratiosiliconnanostructures |