Application of CMOS Technology to Silicon Photomultiplier Sensors

Application of CMOS Technology to Silicon Photomultiplier Sensors

We use the 180 nm GLOBALFOUNDRIES (GF) BCDLite CMOS process for the production of a silicon photomultiplier prototype. We study the main characteristics of the developed sensor in comparison with commercial SiPMs obtained in custom technologies and other SiPMs developed with CMOS-compatible processe...

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Bibliografski detalji
Glavni autori: Nicola D’Ascenzo, Xi Zhang, Qingguo Xie
Format: Članak
Jezik:English
Izdano: MDPI AG 2017-09-01
Serija:Sensors
Teme:
silicon photomultiplier
avalanche detection structures
geiger mode
low photon flux sensors
Online pristup:https://www.mdpi.com/1424-8220/17/10/2204

Internet

https://www.mdpi.com/1424-8220/17/10/2204

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