Improvement of charge carrier lifetime in heat exchange method multicrystalline silicon wafers by extended phosphorous gettering process
External phosphorous diffusion gettering were applied using homogenous and extended schemes on multicrystalline silicon (Mc-Si) wafers obtained from solar grade (SOG) silicon feedstock by the heat exchange method (HEM) growth technique. X-ray fluorescence (XRF) characterization shows the presence of...
| Principais autores: | , , , , , |
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| Formato: | Artigo |
| Idioma: | English |
| Publicado em: |
Renewable Energy Development Center (CDER)
2011-12-01
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| coleção: | Revue des Énergies Renouvelables |
| Assuntos: | |
| Acesso em linha: | https://revue.cder.dz/index.php/rer/article/view/289 |