Improvement of charge carrier lifetime in heat exchange method multicrystalline silicon wafers by extended phosphorous gettering process

Improvement of charge carrier lifetime in heat exchange method multicrystalline silicon wafers by extended phosphorous gettering process

External phosphorous diffusion gettering were applied using homogenous and extended schemes on multicrystalline silicon (Mc-Si) wafers obtained from solar grade (SOG) silicon feedstock by the heat exchange method (HEM) growth technique. X-ray fluorescence (XRF) characterization shows the presence of...

Ausführliche Beschreibung

Bibliographische Detailangaben
Hauptverfasser: D. Bouhafs, M. Boumaour, A. Moussi, S.E.H. Abaïdia, N. Khelifati, B. Palahouane
Format: Artikel
Sprache:English
Veröffentlicht: Renewable Energy Development Center (CDER) 2011-12-01
Schriftenreihe:Revue des Énergies Renouvelables
Schlagworte:
multicrystalline silicon
gettering
metallic impurities
lifetime carrier
Online Zugang:https://revue.cder.dz/index.php/rer/article/view/289

Online

https://revue.cder.dz/index.php/rer/article/view/289

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