Dynamics of Plasma‐Assisted Epitaxial Silicon Growth Driven by a Hydrogen‐Incorporated Nanostructure for Novel Applications

Dynamics of Plasma‐Assisted Epitaxial Silicon Growth Driven by a Hydrogen‐Incorporated Nanostructure for Novel Applications

Plasma‐assisted epitaxially grown silicon (plasma‐epi Si) is a new silicon‐based material with a tailorable nanostructure. Nanovoids can be introduced into plasma‐epi Si during growth, enabling the bottom‐up fabrication of porous Si for applications such as batteries, hydrogen storage, and even expl...

Full description

Bibliographic Details
Main Authors: Joon-Ho Oh, Tae Kyung Lee, Ryoon Young Kim, Jeong-Ho An, Sung-In Mo, Ji-Eun Hong, Sun-Wook Kim, Min Jong Keum, Hee-eun Song, Ka-Hyun Kim
Format: Article
Language:English
Published: Wiley-VCH 2024-02-01
Series:Small Structures
Subjects:
bottom-up growth
epitaxial silicon
film growth
hydrogen incorporation
plasma-enhanced chemical vapor deposition
porous silicon
Online Access:https://doi.org/10.1002/sstr.202300218

Internet

https://doi.org/10.1002/sstr.202300218

Similar Items