Research on a Method to Improve the Temperature Performance of an All-Silicon Accelerometer
This paper presents a novel method for the performance of an all-silicon accelerometer by adjusting the ratio of the Si-SiO<sub>2</sub> bonding area, and the Au-Si bonding area in the anchor zone, with the aim of eliminating stress in the anchor region. The study includes the development...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-04-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/14/4/869 |
| _version_ | 1797604228932304896 |
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| author | Guowen Liu Yu Liu Xiao Ma Xuefeng Wang Xudong Zheng Zhonghe Jin |
| author_facet | Guowen Liu Yu Liu Xiao Ma Xuefeng Wang Xudong Zheng Zhonghe Jin |
| author_sort | Guowen Liu |
| collection | DOAJ |
| description | This paper presents a novel method for the performance of an all-silicon accelerometer by adjusting the ratio of the Si-SiO<sub>2</sub> bonding area, and the Au-Si bonding area in the anchor zone, with the aim of eliminating stress in the anchor region. The study includes the development of an accelerometer model and simulation analysis which demonstrates the stress maps of the accelerometer under different anchor–area ratios, which have a strong impact on the performance of the accelerometer. In practical applications, the deformation of the comb structure fixed by the anchor zone is influenced by the stress in the anchor region, causing a distorted nonlinear response signal. The simulation results demonstrate that when the area ratio of the Si-SiO<sub>2</sub> anchor zone to the Au-Si anchor zone decreases to 0.5, the stress in the anchor zone decreases significantly. Experimental results reveal that the full-temperature stability of zero-bias is optimized from 133 μg to 46 μg when the anchor–zone ratio of the accelerometer decreases from 0.8 to 0.5. At the same time, the full-temperature stability of the scale factor is optimized from 87 ppm to 32 ppm. Furthermore, zero-bias full-temperature stability and scale factor full-temperature stability are improved by 34.6% and 36.8%, respectively. |
| first_indexed | 2024-03-11T04:43:22Z |
| format | Article |
| id | doaj.art-3723260905334108906bd4fede7eecc6 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-11T04:43:22Z |
| publishDate | 2023-04-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-3723260905334108906bd4fede7eecc62023-11-17T20:30:33ZengMDPI AGMicromachines2072-666X2023-04-0114486910.3390/mi14040869Research on a Method to Improve the Temperature Performance of an All-Silicon AccelerometerGuowen Liu0Yu Liu1Xiao Ma2Xuefeng Wang3Xudong Zheng4Zhonghe Jin5School of Aeronautics and Astronautics, Zhejiang University, Hangzhou 310058, ChinaBeijing Institute of Aerospace Control Device, Beijing 100854, ChinaBeijing Institute of Aerospace Control Device, Beijing 100854, ChinaBeijing Institute of Aerospace Control Device, Beijing 100854, ChinaSchool of Aeronautics and Astronautics, Zhejiang University, Hangzhou 310058, ChinaSchool of Aeronautics and Astronautics, Zhejiang University, Hangzhou 310058, ChinaThis paper presents a novel method for the performance of an all-silicon accelerometer by adjusting the ratio of the Si-SiO<sub>2</sub> bonding area, and the Au-Si bonding area in the anchor zone, with the aim of eliminating stress in the anchor region. The study includes the development of an accelerometer model and simulation analysis which demonstrates the stress maps of the accelerometer under different anchor–area ratios, which have a strong impact on the performance of the accelerometer. In practical applications, the deformation of the comb structure fixed by the anchor zone is influenced by the stress in the anchor region, causing a distorted nonlinear response signal. The simulation results demonstrate that when the area ratio of the Si-SiO<sub>2</sub> anchor zone to the Au-Si anchor zone decreases to 0.5, the stress in the anchor zone decreases significantly. Experimental results reveal that the full-temperature stability of zero-bias is optimized from 133 μg to 46 μg when the anchor–zone ratio of the accelerometer decreases from 0.8 to 0.5. At the same time, the full-temperature stability of the scale factor is optimized from 87 ppm to 32 ppm. Furthermore, zero-bias full-temperature stability and scale factor full-temperature stability are improved by 34.6% and 36.8%, respectively.https://www.mdpi.com/2072-666X/14/4/869MEMS accelerometerresponse signalanchor zonestress cancellation |
| spellingShingle | Guowen Liu Yu Liu Xiao Ma Xuefeng Wang Xudong Zheng Zhonghe Jin Research on a Method to Improve the Temperature Performance of an All-Silicon Accelerometer Micromachines MEMS accelerometer response signal anchor zone stress cancellation |
| title | Research on a Method to Improve the Temperature Performance of an All-Silicon Accelerometer |
| title_full | Research on a Method to Improve the Temperature Performance of an All-Silicon Accelerometer |
| title_fullStr | Research on a Method to Improve the Temperature Performance of an All-Silicon Accelerometer |
| title_full_unstemmed | Research on a Method to Improve the Temperature Performance of an All-Silicon Accelerometer |
| title_short | Research on a Method to Improve the Temperature Performance of an All-Silicon Accelerometer |
| title_sort | research on a method to improve the temperature performance of an all silicon accelerometer |
| topic | MEMS accelerometer response signal anchor zone stress cancellation |
| url | https://www.mdpi.com/2072-666X/14/4/869 |
| work_keys_str_mv | AT guowenliu researchonamethodtoimprovethetemperatureperformanceofanallsiliconaccelerometer AT yuliu researchonamethodtoimprovethetemperatureperformanceofanallsiliconaccelerometer AT xiaoma researchonamethodtoimprovethetemperatureperformanceofanallsiliconaccelerometer AT xuefengwang researchonamethodtoimprovethetemperatureperformanceofanallsiliconaccelerometer AT xudongzheng researchonamethodtoimprovethetemperatureperformanceofanallsiliconaccelerometer AT zhonghejin researchonamethodtoimprovethetemperatureperformanceofanallsiliconaccelerometer |