Impact of Output Conductance on Current-Gain Cut-Off Frequency in In<i><sub>x</sub></i>Ga<i><sub>1-x</sub></i>As/In<i><sub>0.52</sub></i>Al<i><sub>0.48</sub></i>As Quantum-Well High-Electron-Mobility Transistors on InP Substrate

Impact of Output Conductance on Current-Gain Cut-Off Frequency in In<i><sub>x</sub></i>Ga<i><sub>1-x</sub></i>As/In<i><sub>0.52</sub></i>Al<i><sub>0.48</sub></i>As Quantum-Well High-Electron-Mobility Transistors on InP Substrate

In this study, we investigated the impact of intrinsic output conductance (<i>g<sub>oi</sub></i>) on the short-circuit current-gain cut-off frequency (<i>f<sub>T</sub></i>) in In<i><sub>x</sub></i>Ga<i><sub>1-x</s...

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Bibliographic Details
Main Authors: Hyo-Jin Kim, In-Geun Lee, Hyeon-Bhin Jo, Tae-Beom Rho, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Jae-Hak Lee, Tae-Woo Kim, Dae-Hyun Kim
Format: Article
Language:English
Published: MDPI AG 2023-01-01
Series:Electronics
Subjects:
small-signal model (SSM)
high-electron-mobility transistor (HEMT)
cut-off frequency (<i>f<sub>T</sub></i>)
output conductance (<i>g<sub>o</sub></i>)
Online Access:https://www.mdpi.com/2079-9292/12/2/259

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https://www.mdpi.com/2079-9292/12/2/259

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