A Novel Mechanism Based on Oxygen Vacancies to Describe Isobutylene and Ammonia Sensing of p-Type Cr<sub>2</sub>O<sub>3</sub> and Ti-Doped Cr<sub>2</sub>O<sub>3</sub> Thin Films

A Novel Mechanism Based on Oxygen Vacancies to Describe Isobutylene and Ammonia Sensing of p-Type Cr<sub>2</sub>O<sub>3</sub> and Ti-Doped Cr<sub>2</sub>O<sub>3</sub> Thin Films

Gas sensors based on metal oxide semiconductors (MOS) have been widely used for the detection and monitoring of flammable and toxic gases. In this paper, p-type Cr<sub>2</sub>O<sub>3</sub> and Ti-doped Cr<sub>2</sub>O<sub>3</sub> (CTO) thin films were...

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Bibliográfalaš dieđut
Váldodahkkit: Pengfei Zhou, Jone-Him Tsang, Chris Blackman, Yanbai Shen, Jinsheng Liang, James A. Covington, John Saffell, Ehsan Danesh
Materiálatiipa: Artihkal
Giella:English
Almmustuhtton: MDPI AG 2024-10-01
Ráidu:Chemosensors
Fáttát:
Cr<sub>2</sub>O<sub>3</sub>
Ti-doped
AACVD
thin films
gas sensor
mechanism
Liŋkkat:https://www.mdpi.com/2227-9040/12/10/218

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https://www.mdpi.com/2227-9040/12/10/218

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