Numerical Study of a Solar Cell to Achieve the Highest InGaN Power Conversion Efficiency for the Whole In-Content Range

A solar cell structure with a graded bandgap absorber layer based on InGaN has been proposed to overcome early predicted efficiency. Technological issues such as carrier concentration in the p- and n-type are based on the data available in the literature. The influence of carrier concentration-depen...

Full description

Bibliographic Details
Main Authors: Rubén Martínez-Revuelta, Horacio I. Solís-Cisneros, Raúl Trejo-Hernández, Madaín Pérez-Patricio, Martha L. Paniagua-Chávez, Rubén Grajales-Coutiño, Jorge L. Camas-Anzueto, Carlos A. Hernández-Gutiérrez
Format: Article
Language:English
Published: MDPI AG 2022-10-01
Series:Micromachines
Subjects:
Online Access:https://www.mdpi.com/2072-666X/13/11/1828