High-Speed and Direction-Controlled Formation of Silicon Nanowire Arrays Assisted by Electric Field
Abstract Metal-assisted chemical etching (MaCE), a low-cost and versatile method was considered a promising technique for preparing silicon nanowires (SiNWs), yet the lack of well controlling the injected holes within Si might reduce the etching rate, create the unwanted sidewall etching, and degrad...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2020-01-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | https://doi.org/10.1186/s11671-020-3259-5 |