High-Speed and Direction-Controlled Formation of Silicon Nanowire Arrays Assisted by Electric Field
Abstract Metal-assisted chemical etching (MaCE), a low-cost and versatile method was considered a promising technique for preparing silicon nanowires (SiNWs), yet the lack of well controlling the injected holes within Si might reduce the etching rate, create the unwanted sidewall etching, and degrad...
Main Authors: | Pin-Ju Chien, Ta-Cheng Wei, Chia-Yun Chen |
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Format: | Article |
Language: | English |
Published: |
SpringerOpen
2020-01-01
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Series: | Nanoscale Research Letters |
Subjects: | |
Online Access: | https://doi.org/10.1186/s11671-020-3259-5 |
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