Anomalous luminescence temperature dependence of (In,Ga)(As,Sb)/GaAs/GaP quantum dots overgrown by a thin GaSb capping layer for nanomemory applications

Anomalous luminescence temperature dependence of (In,Ga)(As,Sb)/GaAs/GaP quantum dots overgrown by a thin GaSb capping layer for nanomemory applications

We study (In,Ga)(As,Sb)/GaAs quantum dots (QDs) embedded in a GaP (100) matrix, which are overgrown by a thin GaSb capping layer with variable thickness. QD samples are studied by temperature-dependent photoluminescence, and we observe that the QD emission shows anomalous temperature dependence, i.e...

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Bibliographic Details
Main Authors: Elisa Maddalena Sala, Petr Klenovský
Format: Article
Language:English
Published: IOP Publishing 2023-01-01
Series:New Journal of Physics
Subjects:
quantum dot
nanomemory
photoluminescence
K.p method
configuration interaction
antimonides
Online Access:https://doi.org/10.1088/1367-2630/ad0856

Internet

https://doi.org/10.1088/1367-2630/ad0856

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