Electrical Characteristics of Bulk FinFET According to Spacer Length

Electrical Characteristics of Bulk FinFET According to Spacer Length

This paper confirms that the electrical characteristics of FinFETs such as the on/off ratio, drain-induced barrier lowering (DIBL), and sub-threshold slope (SS) can be improved by optimizing the FinFET spacer structure. An operating voltage that can maintain a life of 10 years or more when hot-carri...

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Bibliographic Details
Main Authors: Jinsu Park, Jaemin Kim, Sanchari Showdhury, Changhwan Shin, Hwasung Rhee, Myung Soo Yeo, Eun-Chel Cho, Junsin Yi
Format: Article
Language:English
Published: MDPI AG 2020-08-01
Series:Electronics
Subjects:
metal-oxide-semiconductor field-effect transistor
fin field-effect transistor
short-channel effects
drain-induced barrier lowering
self-heating effect
Online Access:https://www.mdpi.com/2079-9292/9/8/1283

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https://www.mdpi.com/2079-9292/9/8/1283

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