Characterization of PN junctions of doped Mott insulators
A heterojunction comprising a La1.9Sr0.1CuO4 thin film on a 0.5 wt. % Nb doped SrTiO3 single-crystal substrate was fabricated using magnetron sputtering deposition and ion milling etching techniques. Rectification has been observed in the current–voltage characteristics of the heterojunctions from 3...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2021-12-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0076151 |