3D NAND Flash Memory Based on Double-Layer NC-Si Floating Gate with High Density of Multilevel Storage

3D NAND Flash Memory Based on Double-Layer NC-Si Floating Gate with High Density of Multilevel Storage

As a strong candidate for computing in memory, 3D NAND flash memory has attracted great attention due to the high computing efficiency, which outperforms the conventional von-Neumann architecture. To ensure 3D NAND flash memory is truly integrated in the computing in a memory chip, a new candidate w...

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Bibliographic Details
Main Authors: Xinyue Yu, Zhongyuan Ma, Zixiao Shen, Wei Li, Kunji Chen, Jun Xu, Ling Xu
Format: Article
Language:English
Published: MDPI AG 2022-07-01
Series:Nanomaterials
Subjects:
3D flash memory
nanocrystalline Si
multilevel storage
Online Access:https://www.mdpi.com/2079-4991/12/14/2459

Internet

https://www.mdpi.com/2079-4991/12/14/2459

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