BSIM—SPICE Models Enable FinFET and UTB IC Designs

BSIM—SPICE Models Enable FinFET and UTB IC Designs

Two turn-key surface potential-based compact models are developed to simulate multigate transistors for integrated circuit (IC) designs. The BSIM-CMG (common-multigate) model is developed to simulate double-, triple-, and all-around-gate FinFETs and it is selected as the world's first industry-...

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Bibliographic Details
Main Authors: Navid Paydavosi, Sriramkumar Venugopalan, Yogesh Singh Chauhan, Juan Pablo Duarte, Srivatsava Jandhyala, Ali M. Niknejad, Chenming Calvin Hu
Format: Article
Language:English
Published: IEEE 2013-01-01
Series:IEEE Access
Subjects:
Double-gate FET
FinFET
integrated circuit modeling
MOSFET compact model
RF FinFET
short-channel effects
Online Access:https://ieeexplore.ieee.org/document/6514968/

Internet

https://ieeexplore.ieee.org/document/6514968/

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