Electrode-stress-induced nanoscale disorder in Si quantum electronic devices

Electrode-stress-induced nanoscale disorder in Si quantum electronic devices

Disorder in the potential-energy landscape presents a major obstacle to the more rapid development of semiconductor quantum device technologies. We report a large-magnitude source of disorder, beyond commonly considered unintentional background doping or fixed charge in oxide layers: nanoscale strai...

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Bibliographic Details
Main Authors: J. Park, Y. Ahn, J. A. Tilka, K. C. Sampson, D. E. Savage, J. R. Prance, C. B. Simmons, M. G. Lagally, S. N. Coppersmith, M. A. Eriksson, M. V. Holt, P. G. Evans
Format: Article
Language:English
Published: AIP Publishing LLC 2016-06-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/1.4954054

Internet

http://dx.doi.org/10.1063/1.4954054

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