Electrode-stress-induced nanoscale disorder in Si quantum electronic devices
Disorder in the potential-energy landscape presents a major obstacle to the more rapid development of semiconductor quantum device technologies. We report a large-magnitude source of disorder, beyond commonly considered unintentional background doping or fixed charge in oxide layers: nanoscale strai...
| Main Authors: | , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2016-06-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.4954054 |
| _version_ | 1829511485142859776 |
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| author | J. Park Y. Ahn J. A. Tilka K. C. Sampson D. E. Savage J. R. Prance C. B. Simmons M. G. Lagally S. N. Coppersmith M. A. Eriksson M. V. Holt P. G. Evans |
| author_facet | J. Park Y. Ahn J. A. Tilka K. C. Sampson D. E. Savage J. R. Prance C. B. Simmons M. G. Lagally S. N. Coppersmith M. A. Eriksson M. V. Holt P. G. Evans |
| author_sort | J. Park |
| collection | DOAJ |
| description | Disorder in the potential-energy landscape presents a major obstacle to the more rapid development of semiconductor quantum device technologies. We report a large-magnitude source of disorder, beyond commonly considered unintentional background doping or fixed charge in oxide layers: nanoscale strain fields induced by residual stresses in nanopatterned metal gates. Quantitative analysis of synchrotron coherent hard x-ray nanobeam diffraction patterns reveals gate-induced curvature and strains up to 0.03% in a buried Si quantum well within a Si/SiGe heterostructure. Electrode stress presents both challenges to the design of devices and opportunities associated with the lateral manipulation of electronic energy levels. |
| first_indexed | 2024-12-16T12:24:42Z |
| format | Article |
| id | doaj.art-3791eeeab5b64a6ea66cbdd6665a1d4a |
| institution | Directory Open Access Journal |
| issn | 2166-532X |
| language | English |
| last_indexed | 2024-12-16T12:24:42Z |
| publishDate | 2016-06-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj.art-3791eeeab5b64a6ea66cbdd6665a1d4a2022-12-21T22:31:51ZengAIP Publishing LLCAPL Materials2166-532X2016-06-0146066102066102-910.1063/1.4954054006606APMElectrode-stress-induced nanoscale disorder in Si quantum electronic devicesJ. Park0Y. Ahn1J. A. Tilka2K. C. Sampson3D. E. Savage4J. R. Prance5C. B. Simmons6M. G. Lagally7S. N. Coppersmith8M. A. Eriksson9M. V. Holt10P. G. Evans11Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USADepartment of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USADepartment of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USADepartment of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USADepartment of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USADepartment of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706, USADepartment of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706, USADepartment of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USADepartment of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706, USADepartment of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USACenter for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439, USADepartment of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USADisorder in the potential-energy landscape presents a major obstacle to the more rapid development of semiconductor quantum device technologies. We report a large-magnitude source of disorder, beyond commonly considered unintentional background doping or fixed charge in oxide layers: nanoscale strain fields induced by residual stresses in nanopatterned metal gates. Quantitative analysis of synchrotron coherent hard x-ray nanobeam diffraction patterns reveals gate-induced curvature and strains up to 0.03% in a buried Si quantum well within a Si/SiGe heterostructure. Electrode stress presents both challenges to the design of devices and opportunities associated with the lateral manipulation of electronic energy levels.http://dx.doi.org/10.1063/1.4954054 |
| spellingShingle | J. Park Y. Ahn J. A. Tilka K. C. Sampson D. E. Savage J. R. Prance C. B. Simmons M. G. Lagally S. N. Coppersmith M. A. Eriksson M. V. Holt P. G. Evans Electrode-stress-induced nanoscale disorder in Si quantum electronic devices APL Materials |
| title | Electrode-stress-induced nanoscale disorder in Si quantum electronic devices |
| title_full | Electrode-stress-induced nanoscale disorder in Si quantum electronic devices |
| title_fullStr | Electrode-stress-induced nanoscale disorder in Si quantum electronic devices |
| title_full_unstemmed | Electrode-stress-induced nanoscale disorder in Si quantum electronic devices |
| title_short | Electrode-stress-induced nanoscale disorder in Si quantum electronic devices |
| title_sort | electrode stress induced nanoscale disorder in si quantum electronic devices |
| url | http://dx.doi.org/10.1063/1.4954054 |
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