PD measurements, failure analysis, and control in high-power IGBT modules

PD measurements, failure analysis, and control in high-power IGBT modules

Increased voltage blocking capability and the development of packaging technology for IGBTs can enhance the local electric field that may become large enough to increase partial discharges (PDs) within the module. The study presents a survey on (i) simulation the electric field within an IGBT module...

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Bibliographic Details
Main Author: Mona Ghassemi
Format: Article
Language:English
Published: Wiley 2018-09-01
Series:High Voltage
Subjects:
electric fields
partial discharges
quality control
insulated gate bipolar transistors
frequency response
failure analysis
partial discharge measurement
silicone insulation
semiconductor device reliability
high-power IGBT modules
high-power insulated gate bipolar transistors
local electric field
electrical insulation failure
insulation systems
diagnostic control test methods
quality control test methods
electric field calculations
power frequency
insulating systems
fast rise pulse-width modulation-like voltages
PD control methods
IGBT module reliability
insulating silicone gel
PD measurements
copper metallisation
composite nonlinear field grading materials
ceramic substrate
IEC 61287-1
phase-resolved PD patterns
frequency 60.0 Hz
frequency 50 Hz
Online Access:https://digital-library.theiet.org/content/journals/10.1049/hve.2017.0186

Internet

https://digital-library.theiet.org/content/journals/10.1049/hve.2017.0186

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