The improvement of breakdown-voltage (¿2000 V) in GaN based HFETs by using double polarization junctions

The improvement of breakdown-voltage (¿2000 V) in GaN based HFETs by using double polarization junctions

A novel AlGaN/GaN Super Heterojunction Field Effect Transistors (super HFET) with dual-polarization junction (DPJ) on the back-barrier layer and its working mechanism is studied. DPJ AlGaN/GaN super HEMT has two polarization junctions with an interval of 1 μm composed of a p-type GaN cap layer and a...

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Bibliographic Details
Main Authors: Xiuyang Tan, Huiqing Sun, Yuan Li, Xiaoyu Xia, Fan Xia, Miao Zhang, Jiancheng Ma, Liang Xu, Zhiyou Guo
Format: Article
Language:English
Published: Elsevier 2022-06-01
Series:Results in Physics
Subjects:
Super HFET
Polarization Junctions
GaN
High breakdown-voltage
Online Access:http://www.sciencedirect.com/science/article/pii/S2211379722002492

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http://www.sciencedirect.com/science/article/pii/S2211379722002492

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