Growth of 300-nm-thick epitaxial AlInN films on a semi-relaxed c-plane GaInN template by metalorganic chemical vapor deposition
Metalorganic chemical vapor deposition of approximately 300-nm thick epitaxial AlInN films with different alloy compositions was performed using a semi-relaxed c -plane GaInN template as an underlying substrate. The GaInN template consisted of a Ga _0.98 In _0.02 N film on a facet-structured GaN fil...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2021-01-01
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| Series: | Materials Research Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2053-1591/abe250 |