Growth of 300-nm-thick epitaxial AlInN films on a semi-relaxed c-plane GaInN template by metalorganic chemical vapor deposition
Metalorganic chemical vapor deposition of approximately 300-nm thick epitaxial AlInN films with different alloy compositions was performed using a semi-relaxed c -plane GaInN template as an underlying substrate. The GaInN template consisted of a Ga _0.98 In _0.02 N film on a facet-structured GaN fil...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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IOP Publishing
2021-01-01
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| Series: | Materials Research Express |
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| Online Access: | https://doi.org/10.1088/2053-1591/abe250 |
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| author | Makoto Miyoshi Mizuki Yamanaka Takashi Egawa Narihito Okada Kazuyuki Tadatomo Tetsuya Takeuchi |
| author_facet | Makoto Miyoshi Mizuki Yamanaka Takashi Egawa Narihito Okada Kazuyuki Tadatomo Tetsuya Takeuchi |
| author_sort | Makoto Miyoshi |
| collection | DOAJ |
| description | Metalorganic chemical vapor deposition of approximately 300-nm thick epitaxial AlInN films with different alloy compositions was performed using a semi-relaxed c -plane GaInN template as an underlying substrate. The GaInN template consisted of a Ga _0.98 In _0.02 N film on a facet-structured GaN film formed on a c -plane sapphire substrate by the epitaxial lateral overgrowth technique, and its surface was treated with the chemical-mechanical polishing. It was observed that an Al _0.835 In _0.165 N film grown with an in-plane tensile strain exhibited a relatively smooth surface whereas an Al _0.781 In _0.219 N film grown with an in-plane compressive strain exhibited a granular morphology owing to a columnar polycrystalline structure. This phenomenon was quite similar to that observed for AlInN films grown non GaN/sapphire templates (GaN templates); therefore, it was speculated that the microstructure variation might have been caused by the in-plane compressive strain generated in AlInN films on the GaInN template in the same way as on GaN templates or FS-GaN substrates. |
| first_indexed | 2024-03-12T15:40:58Z |
| format | Article |
| id | doaj.art-37b4bba97a74491082acd8295769be73 |
| institution | Directory Open Access Journal |
| issn | 2053-1591 |
| language | English |
| last_indexed | 2024-03-12T15:40:58Z |
| publishDate | 2021-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Materials Research Express |
| spelling | doaj.art-37b4bba97a74491082acd8295769be732023-08-09T15:58:51ZengIOP PublishingMaterials Research Express2053-15912021-01-018202590610.1088/2053-1591/abe250Growth of 300-nm-thick epitaxial AlInN films on a semi-relaxed c-plane GaInN template by metalorganic chemical vapor depositionMakoto Miyoshi0https://orcid.org/0000-0001-9583-1891Mizuki Yamanaka1Takashi Egawa2Narihito Okada3Kazuyuki Tadatomo4Tetsuya Takeuchi5Research Center for Nano Devices and Advanced Materials, Nagoya Institute of Technology, Nagoya, Japan; Innovation Center for Multi-Business of Nitride Semiconductors, Nagoya Institute of Technology, Nagoya, JapanResearch Center for Nano Devices and Advanced Materials, Nagoya Institute of Technology, Nagoya, JapanResearch Center for Nano Devices and Advanced Materials, Nagoya Institute of Technology, Nagoya, Japan; Innovation Center for Multi-Business of Nitride Semiconductors, Nagoya Institute of Technology, Nagoya, JapanGraduate School of Science and Technology for Innovation, Yamaguchi University , Ube, JapanGraduate School of Science and Technology for Innovation, Yamaguchi University , Ube, JapanFaculty of Science and Technology, Meijo University , Nagoya, JapanMetalorganic chemical vapor deposition of approximately 300-nm thick epitaxial AlInN films with different alloy compositions was performed using a semi-relaxed c -plane GaInN template as an underlying substrate. The GaInN template consisted of a Ga _0.98 In _0.02 N film on a facet-structured GaN film formed on a c -plane sapphire substrate by the epitaxial lateral overgrowth technique, and its surface was treated with the chemical-mechanical polishing. It was observed that an Al _0.835 In _0.165 N film grown with an in-plane tensile strain exhibited a relatively smooth surface whereas an Al _0.781 In _0.219 N film grown with an in-plane compressive strain exhibited a granular morphology owing to a columnar polycrystalline structure. This phenomenon was quite similar to that observed for AlInN films grown non GaN/sapphire templates (GaN templates); therefore, it was speculated that the microstructure variation might have been caused by the in-plane compressive strain generated in AlInN films on the GaInN template in the same way as on GaN templates or FS-GaN substrates.https://doi.org/10.1088/2053-1591/abe250AlInNGaInNlattice strain |
| spellingShingle | Makoto Miyoshi Mizuki Yamanaka Takashi Egawa Narihito Okada Kazuyuki Tadatomo Tetsuya Takeuchi Growth of 300-nm-thick epitaxial AlInN films on a semi-relaxed c-plane GaInN template by metalorganic chemical vapor deposition Materials Research Express AlInN GaInN lattice strain |
| title | Growth of 300-nm-thick epitaxial AlInN films on a semi-relaxed c-plane GaInN template by metalorganic chemical vapor deposition |
| title_full | Growth of 300-nm-thick epitaxial AlInN films on a semi-relaxed c-plane GaInN template by metalorganic chemical vapor deposition |
| title_fullStr | Growth of 300-nm-thick epitaxial AlInN films on a semi-relaxed c-plane GaInN template by metalorganic chemical vapor deposition |
| title_full_unstemmed | Growth of 300-nm-thick epitaxial AlInN films on a semi-relaxed c-plane GaInN template by metalorganic chemical vapor deposition |
| title_short | Growth of 300-nm-thick epitaxial AlInN films on a semi-relaxed c-plane GaInN template by metalorganic chemical vapor deposition |
| title_sort | growth of 300 nm thick epitaxial alinn films on a semi relaxed c plane gainn template by metalorganic chemical vapor deposition |
| topic | AlInN GaInN lattice strain |
| url | https://doi.org/10.1088/2053-1591/abe250 |
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