Growth of 300-nm-thick epitaxial AlInN films on a semi-relaxed c-plane GaInN template by metalorganic chemical vapor deposition

Growth of 300-nm-thick epitaxial AlInN films on a semi-relaxed c-plane GaInN template by metalorganic chemical vapor deposition

Metalorganic chemical vapor deposition of approximately 300-nm thick epitaxial AlInN films with different alloy compositions was performed using a semi-relaxed c -plane GaInN template as an underlying substrate. The GaInN template consisted of a Ga _0.98 In _0.02 N film on a facet-structured GaN fil...

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Bibliographic Details
Main Authors:	Makoto Miyoshi, Mizuki Yamanaka, Takashi Egawa, Narihito Okada, Kazuyuki Tadatomo, Tetsuya Takeuchi
Format:	Article
Language:	English
Published:	IOP Publishing 2021-01-01
Series:	Materials Research Express
Subjects:	AlInN GaInN lattice strain
Online Access:	https://doi.org/10.1088/2053-1591/abe250

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