Wafer-scale heteroepitaxy GaN film free of high-density dislocation region with hexagonal 3D serpentine mask

Wafer-scale heteroepitaxy GaN film free of high-density dislocation region with hexagonal 3D serpentine mask

GaN-based III-Nitride compound semiconductors are fundamental materials for high-performance optoelectronic and electronic devices. Low-defect-density substrate has been a major bottleneck in achieving high internal quantum efficiency and high breakdown voltage in those devices. However, a large-sca...

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Bibliographic Details
Main Authors: Menglai Lei, Huanqing Chen, Muhammad Saddique Akbar Khan, Shukun Li, Rui Lang, Peijun Wen, Guo Yu, Shengxiang Jiang, Hua Zong, Xiaodong Hu
Format: Article
Language:English
Published: Elsevier 2023-10-01
Series:Applied Surface Science Advances
Subjects:
GaN
3D serpentine mask
Dislocation reduction
Facets control
Stress relaxation
LED
Online Access:http://www.sciencedirect.com/science/article/pii/S2666523923000831

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http://www.sciencedirect.com/science/article/pii/S2666523923000831

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