Superconductivity in Group III-V Semiconductor AlN Under High Pressure
The electronic properties of cubic zinc blende type group III-V semiconductor AlN under pressure is studied using full potential linear muffin-tin orbital (FP-LMTO) method. At normal pressure, AlN is an indirect bandgap semiconductor with band gap value 4.56 eV. When the pressure is increased, ther...
Main Authors: | , , , |
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Format: | Article |
Language: | English |
Published: |
Universidade Federal de Mato Grosso do Sul
2013-09-01
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Series: | Orbital: The Electronic Journal of Chemistry |
Subjects: | |
Online Access: | https://periodicos.ufms.br/index.php/orbital/article/view/17864 |