Superconductivity in Group III-V Semiconductor AlN Under High Pressure

Superconductivity in Group III-V Semiconductor AlN Under High Pressure

The electronic properties of cubic zinc blende type group III-V semiconductor AlN under pressure is studied using full potential linear muffin-tin orbital (FP-LMTO) method. At normal pressure, AlN is an indirect bandgap semiconductor with band gap value 4.56 eV. When the pressure is increased, ther...

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Bibliographic Details
Main Authors: G. Selva Dancy, V. Benaline Sheeba, C. Nirmala Louis, A. Amalraj
Format: Article
Language:English
Published: Universidade Federal de Mato Grosso do Sul 2013-09-01
Series:Orbital: The Electronic Journal of Chemistry
Subjects:
band structure
density of states
phase transition
metallization
superconductivity
high pressure
Online Access:https://periodicos.ufms.br/index.php/orbital/article/view/17864

Internet

https://periodicos.ufms.br/index.php/orbital/article/view/17864

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