Capacitance characterization of graphene/n-Si Schottky junction solar cell with MOS capacitor

Capacitance characterization of graphene/n-Si Schottky junction solar cell with MOS capacitor

We have demonstrated a simple and accurate method for characterizing the capacitance of Graphene/n-Si Schottky junction solar cells (GSSCs) which embed the metal-oxide-semiconductor (MOS) capacitor. We measured two types of GSSCs, one with thermal annealing treatments (w-a) and one without (wo-a). I...

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Bibliographic Details
Main Authors: Masahiro Teraoka, Yuzuki Ono, Hojun Im
Format: Article
Language:English
Published: IOP Publishing 2023-01-01
Series:Materials Research Express
Subjects:
capacitance characterization
graphene
silicon
Schottky junction solar cell
Online Access:https://doi.org/10.1088/2053-1591/acf09c

Internet

https://doi.org/10.1088/2053-1591/acf09c

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