InGaAsPBi grown on InP substrate by gas source molecular beam epitaxy
The effects of growth condition on material quality of quinary alloy InGaAsPBi grown by gas source molecular beam epitaxy (GSMBE) were investigated systematically. It is found that 0.1% of Bi incorporation can play the role of surfactant effects and is beneficial to improve the material quality. The...
| المؤلفون الرئيسيون: | , , , , |
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| التنسيق: | مقال |
| اللغة: | English |
| منشور في: |
IOP Publishing
2021-01-01
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| سلاسل: | Materials Research Express |
| الموضوعات: | |
| الوصول للمادة أونلاين: | https://doi.org/10.1088/2053-1591/abe430 |