Effect of InGaN/GaN superlattice as underlayer on characteristics of AlGaN/GaN HEMT
The impact of an InGaN/GaN superlattice (SL) on AlGaN/GaN high electron mobility transistor characteristics was investigated, and two effects were discovered: one is a substantial improvement in the conduction characteristics as a result of the InGaN/GaN channel layer, while the other is the effect...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-02-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5139591 |