A hysteresis loop in electrical resistance of NbHx observed above the β−λ transition temperature

A hysteresis loop in electrical resistance of NbHx observed above the β−λ transition temperature

We investigate the electron transport properties and structures of β-NbHx(010) epitaxial thin films on Al2O3(001) substrates with a variety of hydrogen contents. NbHx epitaxial thin films with x ≥ 0.77 exhibit a hysteresis loop in their resistance near room temperature. Notably, this hysteresis loop...

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Bibliographic Details
Main Authors: Yuki Sasahara, Ryota Shimizu, Hiroyuki Oguchi, Kazunori Nishio, Shohei Ogura, Hitoshi Morioka, Shin-ichi Orimo, Katsuyuki Fukutani, Taro Hitosugi
Format: Article
Language:English
Published: AIP Publishing LLC 2019-01-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5066367

Internet

http://dx.doi.org/10.1063/1.5066367

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