Advanced CMOS device technologies for 45 nm node and below

We review and discuss the latest developments and technology options for 45 nm node and below, with scaled planar bulk MOSFETs and MuGFETs as emerging devices. One of the main metal gate (MG) candidates for scaled CMOS technologies are fully silicided (FUSI) gates. In this work, by means of a select...

Full description

Bibliographic Details
Main Author: A. Veloso, T. Hoffmann, A. Lauwers, H. Yu, S. Severi, E. Augendre, S. Kubicek, P. Verheyen, N. Collaert, P. Absil, M. Jurczak and S. Biesemans
Format: Article
Language:English
Published: Taylor & Francis Group 2007-01-01
Series:Science and Technology of Advanced Materials
Online Access:http://www.iop.org/EJ/abstract/1468-6996/8/3/A19