Radiation and Annealing Effects on GaN MOSFETs Irradiated by 1 MeV Electrons
In this paper, the 650 V N-channel GaN MOSFETs are chosen as the research object to study the radiation and annealing effects under 1 MeV electron irradiation. The output, transfer, and breakdown characteristics are measured before and after electron irradiation. The experimental results show the va...
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-04-01
|
| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/11/8/1186 |