| Summary: | In this paper, the 650 V N-channel GaN MOSFETs are chosen as the research object to study the radiation and annealing effects under 1 MeV electron irradiation. The output, transfer, and breakdown characteristics are measured before and after electron irradiation. The experimental results show the variation of the I-V curves after irradiation, which is related to the increased conductivity due to the generation of an oxide charge in the GaN MOSFETs. However, the gradual formation of the interface trapped charge offsets the effect of the oxide charge, which decreases the conductivity of the GaN MOSFETs and the drain-source current. The long-term annealing at room temperature degrades the interface trapped charges, leading to the restoration of the I-V characteristics. After room temperature annealing, the breakdown voltage is still higher than the unirradiated level, and this is because the displacement defects caused by electron irradiation cannot be recovered at room temperature.
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