Design of High-Frequency, High-Power Class <inline-formula><tex-math notation="LaTeX">$\Phi _{2}$</tex-math></inline-formula> Inverter Through On-Resistance and Output Capacitance Loss Reduction in 650 V Parallel eGaN Transistors for Optimal Thermal Performance

Design of High-Frequency, High-Power Class <inline-formula><tex-math notation="LaTeX">$\Phi _{2}$</tex-math></inline-formula> Inverter Through On-Resistance and Output Capacitance Loss Reduction in 650 V Parallel eGaN Transistors for Optimal Thermal Performance

This article presents a class <inline-formula><tex-math notation="LaTeX">$\Phi _{2}$</tex-math></inline-formula> inverters for high-power applications using multiple enhancement-mode gallium nitride (eGaN) switching devices operating at 13.56 MHz. The eGaN devices a...

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Bibliographic Details
Main Authors: Kamlesh Sawant, Yu Zhou, Keerti Palanisamy, Jungwon Choi
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Open Journal of Power Electronics
Subjects:
Gallium nitride
high frequency
power semiconductor devices
resonant inverters
Online Access:https://ieeexplore.ieee.org/document/10207688/

Internet

https://ieeexplore.ieee.org/document/10207688/

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