1 eV Ga(NAsSb) grown by MOVPE using di-tertiary-butyl-arsano-amine (DTBAA)

1 eV Ga(NAsSb) grown by MOVPE using di-tertiary-butyl-arsano-amine (DTBAA)

N containing lattice matched 1 eV materials, such as Ga(NAsSb) and (GaIn)(NAs), are discussed as potential solar subcells in a four junction solar cell alongside Ge, GaAs, and (GaIn)P, reaching theoretically conversion efficiencies of around 50 %. The solar subcell with the highest conversion effici...

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Bibliographic Details
Main Authors: E. Sterzer, O. Maßmeyer, L. Nattermann, K. Jandieri, S. Gupta, A. Beyer, B. Ringler, C. von Hänisch, W. Stolz, K. Volz
Format: Article
Language:English
Published: AIP Publishing LLC 2018-05-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5034083

Internet

http://dx.doi.org/10.1063/1.5034083

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