1 eV Ga(NAsSb) grown by MOVPE using di-tertiary-butyl-arsano-amine (DTBAA)
N containing lattice matched 1 eV materials, such as Ga(NAsSb) and (GaIn)(NAs), are discussed as potential solar subcells in a four junction solar cell alongside Ge, GaAs, and (GaIn)P, reaching theoretically conversion efficiencies of around 50 %. The solar subcell with the highest conversion effici...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-05-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5034083 |
| _version_ | 1819259767717101568 |
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| author | E. Sterzer O. Maßmeyer L. Nattermann K. Jandieri S. Gupta A. Beyer B. Ringler C. von Hänisch W. Stolz K. Volz |
| author_facet | E. Sterzer O. Maßmeyer L. Nattermann K. Jandieri S. Gupta A. Beyer B. Ringler C. von Hänisch W. Stolz K. Volz |
| author_sort | E. Sterzer |
| collection | DOAJ |
| description | N containing lattice matched 1 eV materials, such as Ga(NAsSb) and (GaIn)(NAs), are discussed as potential solar subcells in a four junction solar cell alongside Ge, GaAs, and (GaIn)P, reaching theoretically conversion efficiencies of around 50 %. The solar subcell with the highest conversion efficiency, consisting of (GaIn)(NAsSb), was grown with molecular beam epitaxy (MBE). The growth of Sb/N containing materials have always been a challenge to metalorganic vapor phase epitaxy (MOVPE), as N incorporation is hindered drastically by even small amounts of Sb if 1,1-dimethylhydrazine is used. This strong N/Sb interaction was not observed by MBE, therefore gas phase reactions in MOVPE are held responsible for the N incorporation drop. In this work we will present a systematic study of Ga(NAsSb) on GaAs grown in MOVPE with the novel N/As precursor di-tertiary-butyl-arsano-amine, as well as triethylgallium and triethylantimony. The achieved 1 eV Ga(NAsSb) material opens up new possibilities for using MOVPE to grow further solar subcells like (GaIn)(NAsSb) or Ga(NAsSb) in the band gap range of 1.0 – 1.1 eV. |
| first_indexed | 2024-12-23T19:15:15Z |
| format | Article |
| id | doaj.art-3845e4e296a448a292b65644dc364999 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-23T19:15:15Z |
| publishDate | 2018-05-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-3845e4e296a448a292b65644dc3649992022-12-21T17:34:19ZengAIP Publishing LLCAIP Advances2158-32262018-05-0185055329055329-910.1063/1.5034083105805ADV1 eV Ga(NAsSb) grown by MOVPE using di-tertiary-butyl-arsano-amine (DTBAA)E. Sterzer0O. Maßmeyer1L. Nattermann2K. Jandieri3S. Gupta4A. Beyer5B. Ringler6C. von Hänisch7W. Stolz8K. Volz9Material Sciences Center and Faculty of Physics, Philipps-Universität Marburg, 35032, GermanyMaterial Sciences Center and Faculty of Physics, Philipps-Universität Marburg, 35032, GermanyMaterial Sciences Center and Faculty of Physics, Philipps-Universität Marburg, 35032, GermanyMaterial Sciences Center and Faculty of Physics, Philipps-Universität Marburg, 35032, GermanyMaterial Sciences Center and Faculty of Physics, Philipps-Universität Marburg, 35032, GermanyMaterial Sciences Center and Faculty of Physics, Philipps-Universität Marburg, 35032, GermanyMaterial Sciences Center and Faculty of Chemistry, Philipps-Universität Marburg, 35032, GermanyMaterial Sciences Center and Faculty of Chemistry, Philipps-Universität Marburg, 35032, GermanyMaterial Sciences Center and Faculty of Physics, Philipps-Universität Marburg, 35032, GermanyMaterial Sciences Center and Faculty of Physics, Philipps-Universität Marburg, 35032, GermanyN containing lattice matched 1 eV materials, such as Ga(NAsSb) and (GaIn)(NAs), are discussed as potential solar subcells in a four junction solar cell alongside Ge, GaAs, and (GaIn)P, reaching theoretically conversion efficiencies of around 50 %. The solar subcell with the highest conversion efficiency, consisting of (GaIn)(NAsSb), was grown with molecular beam epitaxy (MBE). The growth of Sb/N containing materials have always been a challenge to metalorganic vapor phase epitaxy (MOVPE), as N incorporation is hindered drastically by even small amounts of Sb if 1,1-dimethylhydrazine is used. This strong N/Sb interaction was not observed by MBE, therefore gas phase reactions in MOVPE are held responsible for the N incorporation drop. In this work we will present a systematic study of Ga(NAsSb) on GaAs grown in MOVPE with the novel N/As precursor di-tertiary-butyl-arsano-amine, as well as triethylgallium and triethylantimony. The achieved 1 eV Ga(NAsSb) material opens up new possibilities for using MOVPE to grow further solar subcells like (GaIn)(NAsSb) or Ga(NAsSb) in the band gap range of 1.0 – 1.1 eV.http://dx.doi.org/10.1063/1.5034083 |
| spellingShingle | E. Sterzer O. Maßmeyer L. Nattermann K. Jandieri S. Gupta A. Beyer B. Ringler C. von Hänisch W. Stolz K. Volz 1 eV Ga(NAsSb) grown by MOVPE using di-tertiary-butyl-arsano-amine (DTBAA) AIP Advances |
| title | 1 eV Ga(NAsSb) grown by MOVPE using di-tertiary-butyl-arsano-amine (DTBAA) |
| title_full | 1 eV Ga(NAsSb) grown by MOVPE using di-tertiary-butyl-arsano-amine (DTBAA) |
| title_fullStr | 1 eV Ga(NAsSb) grown by MOVPE using di-tertiary-butyl-arsano-amine (DTBAA) |
| title_full_unstemmed | 1 eV Ga(NAsSb) grown by MOVPE using di-tertiary-butyl-arsano-amine (DTBAA) |
| title_short | 1 eV Ga(NAsSb) grown by MOVPE using di-tertiary-butyl-arsano-amine (DTBAA) |
| title_sort | 1 ev ga nassb grown by movpe using di tertiary butyl arsano amine dtbaa |
| url | http://dx.doi.org/10.1063/1.5034083 |
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