Microstructure and Optical Characterization of Mid-Wave HgCdTe Grown by MBE under Different Conditions

The mid-wave single-crystal HgCdTe (211) films were successfully grown on GaAs (211) B substrates by molecular beam epitaxy (MBE). Microstructure and optical properties of the MBE growth HgCdTe films grown at different temperatures were characterized by X-ray diffraction, scanning transmission elect...

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Bibliographic Details
Main Authors: Xiao-Fang Qiu, Sheng-Xi Zhang, Jian Zhang, Yi-Cheng Zhu, Cheng Dou, San-Can Han, Yan Wu, Ping-Ping Chen
Format: Article
Language:English
Published: MDPI AG 2021-03-01
Series:Crystals
Subjects:
Online Access:https://www.mdpi.com/2073-4352/11/3/296