Nonvolatile Electrochemical Random‐Access Memory under Short Circuit

Nonvolatile Electrochemical Random‐Access Memory under Short Circuit

Abstract Electrochemical random‐access memory (ECRAM) is a recently developed and highly promising analog resistive memory element for in‐memory computing. One longstanding challenge of ECRAM is attaining retention time beyond a few hours. This short retention has precluded ECRAM from being consider...

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Bibliographic Details
Main Authors: Diana S. Kim, Virgil J. Watkins, Laszlo A. Cline, Jingxian Li, Kai Sun, Joshua D. Sugar, Elliot J. Fuller, A. Alec Talin, Yiyang Li
Format: Article
Language:English
Published: Wiley-VCH 2023-01-01
Series:Advanced Electronic Materials
Subjects:
in‐memory computing
oxygen vacancies
retention
tungsten oxide
Online Access:https://doi.org/10.1002/aelm.202200958

Internet

https://doi.org/10.1002/aelm.202200958

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