AES Studies of Heteroepitaxial SiC Films Deposited on Si and on Sapphire Substrates by MOCVD
Auger electron spectroscopy (AES) has been used to investigate the chemical composition of the heteroepitaxial silicon carbide films grown on Si (100) and sapphire (0001) substrates at 900 °C by the MOCVD technique using DEMS precursor. Auger spectra were obtained from the surface and as a function...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
al-Farabi Kazakh National University
2013-07-01
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| Series: | Eurasian Chemico-Technological Journal |
| Online Access: | http://ect-journal.kz/index.php/ectj/article/view/332 |