AES Studies of Heteroepitaxial SiC Films Deposited on Si and on Sapphire Substrates by MOCVD
Auger electron spectroscopy (AES) has been used to investigate the chemical composition of the heteroepitaxial silicon carbide films grown on Si (100) and sapphire (0001) substrates at 900 °C by the MOCVD technique using DEMS precursor. Auger spectra were obtained from the surface and as a function...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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al-Farabi Kazakh National University
2013-07-01
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| Series: | Eurasian Chemico-Technological Journal |
| Online Access: | http://ect-journal.kz/index.php/ectj/article/view/332 |
| _version_ | 1811277920751058944 |
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| author | R. E. Beisenov R. Ebrahim A. Zommorodian Z. A. Mansurov S. Zh. Tokmoldin A. Ignatiev |
| author_facet | R. E. Beisenov R. Ebrahim A. Zommorodian Z. A. Mansurov S. Zh. Tokmoldin A. Ignatiev |
| author_sort | R. E. Beisenov |
| collection | DOAJ |
| description | Auger electron spectroscopy (AES) has been used to investigate the chemical composition of the heteroepitaxial silicon carbide films grown on Si (100) and sapphire (0001) substrates at 900 °C by the MOCVD technique using DEMS precursor. Auger spectra were obtained from the surface and as a function of depth of 2 micron thick SiC films. AES measurements were performed under very high vacuum 10-9 Torr conditions. Surface cleaning and depth profile studies were carried out by using Ar+ ion beam sputtering. Auger spectra of the surface indicate Si LVV, C KLL and O KLL peaks. The Si LVV signals on the ‘as prepared’ surfaces for both substrates indicated that the silicon was in the oxide state, which was removed after 15 min Ar+ ion cleaning. Depth profile studies showed, that after 20 min of ion cleaning the SiC films possess near stoichiometric composition. Moreover, the C KLL signal on the ion cleaned films showed the carbon in the carbide state. X-ray diffraction analysis of the SiC films on the sapphire (0001) and Si(100) substrates has shown a high intensity single peaks at 35.7º, which indicates the presence of SiC at orientation (111). |
| first_indexed | 2024-04-13T00:25:29Z |
| format | Article |
| id | doaj.art-38757908a31d40a8aaa24c7836fcfa0e |
| institution | Directory Open Access Journal |
| issn | 1562-3920 2522-4867 |
| language | English |
| last_indexed | 2024-04-13T00:25:29Z |
| publishDate | 2013-07-01 |
| publisher | al-Farabi Kazakh National University |
| record_format | Article |
| series | Eurasian Chemico-Technological Journal |
| spelling | doaj.art-38757908a31d40a8aaa24c7836fcfa0e2022-12-22T03:10:37Zengal-Farabi Kazakh National UniversityEurasian Chemico-Technological Journal1562-39202522-48672013-07-0115325926310.18321/ectj230332AES Studies of Heteroepitaxial SiC Films Deposited on Si and on Sapphire Substrates by MOCVDR. E. Beisenov0R. Ebrahim1A. Zommorodian2Z. A. Mansurov3S. Zh. Tokmoldin4A. Ignatiev5The Institute of Combustion Problems, 050012 Almaty, 172 Bogenbay Batyr st., KazakhstanCenter for Advanced Materials, University of Houston, 4800 Calhoun Rd, Houston, TX 77004, USACenter for Advanced Materials, University of Houston, 4800 Calhoun Rd, Houston, TX 77004, USAThe Institute of Combustion Problems, 050012 Almaty, 172 Bogenbay Batyr st., KazakhstanInstitute of Physics and Technology, 050032 Almaty, Ibragimov st. 11, KazakhstanCenter for Advanced Materials, University of Houston, 4800 Calhoun Rd, Houston, TX 77004, USAAuger electron spectroscopy (AES) has been used to investigate the chemical composition of the heteroepitaxial silicon carbide films grown on Si (100) and sapphire (0001) substrates at 900 °C by the MOCVD technique using DEMS precursor. Auger spectra were obtained from the surface and as a function of depth of 2 micron thick SiC films. AES measurements were performed under very high vacuum 10-9 Torr conditions. Surface cleaning and depth profile studies were carried out by using Ar+ ion beam sputtering. Auger spectra of the surface indicate Si LVV, C KLL and O KLL peaks. The Si LVV signals on the ‘as prepared’ surfaces for both substrates indicated that the silicon was in the oxide state, which was removed after 15 min Ar+ ion cleaning. Depth profile studies showed, that after 20 min of ion cleaning the SiC films possess near stoichiometric composition. Moreover, the C KLL signal on the ion cleaned films showed the carbon in the carbide state. X-ray diffraction analysis of the SiC films on the sapphire (0001) and Si(100) substrates has shown a high intensity single peaks at 35.7º, which indicates the presence of SiC at orientation (111).http://ect-journal.kz/index.php/ectj/article/view/332 |
| spellingShingle | R. E. Beisenov R. Ebrahim A. Zommorodian Z. A. Mansurov S. Zh. Tokmoldin A. Ignatiev AES Studies of Heteroepitaxial SiC Films Deposited on Si and on Sapphire Substrates by MOCVD Eurasian Chemico-Technological Journal |
| title | AES Studies of Heteroepitaxial SiC Films Deposited on Si and on Sapphire Substrates by MOCVD |
| title_full | AES Studies of Heteroepitaxial SiC Films Deposited on Si and on Sapphire Substrates by MOCVD |
| title_fullStr | AES Studies of Heteroepitaxial SiC Films Deposited on Si and on Sapphire Substrates by MOCVD |
| title_full_unstemmed | AES Studies of Heteroepitaxial SiC Films Deposited on Si and on Sapphire Substrates by MOCVD |
| title_short | AES Studies of Heteroepitaxial SiC Films Deposited on Si and on Sapphire Substrates by MOCVD |
| title_sort | aes studies of heteroepitaxial sic films deposited on si and on sapphire substrates by mocvd |
| url | http://ect-journal.kz/index.php/ectj/article/view/332 |
| work_keys_str_mv | AT rebeisenov aesstudiesofheteroepitaxialsicfilmsdepositedonsiandonsapphiresubstratesbymocvd AT rebrahim aesstudiesofheteroepitaxialsicfilmsdepositedonsiandonsapphiresubstratesbymocvd AT azommorodian aesstudiesofheteroepitaxialsicfilmsdepositedonsiandonsapphiresubstratesbymocvd AT zamansurov aesstudiesofheteroepitaxialsicfilmsdepositedonsiandonsapphiresubstratesbymocvd AT szhtokmoldin aesstudiesofheteroepitaxialsicfilmsdepositedonsiandonsapphiresubstratesbymocvd AT aignatiev aesstudiesofheteroepitaxialsicfilmsdepositedonsiandonsapphiresubstratesbymocvd |