X-Band GaN High-Power Amplifier Using Hybrid Power Combining Technique for SAR Applications

X-Band GaN High-Power Amplifier Using Hybrid Power Combining Technique for SAR Applications

An X-band high-power amplifier (HPA) based on gallium nitride (GaN) high electron mobility transistors (HEMTs) has been developed for synthetic aperture radar (SAR) applications. A hybrid power combining technique, including microstrip circuits and waveguides, is used to design the HPA. For reducing...

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Bibliographic Details
Main Authors: Y.-J. Lee, C.-Y. Chang, Y.-H. Chou, I-Y. Tarn, J. Y.-C. Yaung, J.-H. Tarng, S.-J. Chung
Format: Article
Language:English
Published: Advanced Electromagnetics 2018-12-01
Series:Advanced Electromagnetics
Subjects:
GaN HEMT
high power amplifier
hybrid power combining
SAR
X-band
Online Access:https://aemjournal.org/index.php/AEM/article/view/917

Internet

https://aemjournal.org/index.php/AEM/article/view/917

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