X-Band GaN High-Power Amplifier Using Hybrid Power Combining Technique for SAR Applications
An X-band high-power amplifier (HPA) based on gallium nitride (GaN) high electron mobility transistors (HEMTs) has been developed for synthetic aperture radar (SAR) applications. A hybrid power combining technique, including microstrip circuits and waveguides, is used to design the HPA. For reducing...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Advanced Electromagnetics
2018-12-01
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| Series: | Advanced Electromagnetics |
| Subjects: | |
| Online Access: | https://aemjournal.org/index.php/AEM/article/view/917 |
| _version_ | 1818701186174287872 |
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| author | Y.-J. Lee C.-Y. Chang Y.-H. Chou I-Y. Tarn J. Y.-C. Yaung J.-H. Tarng S.-J. Chung |
| author_facet | Y.-J. Lee C.-Y. Chang Y.-H. Chou I-Y. Tarn J. Y.-C. Yaung J.-H. Tarng S.-J. Chung |
| author_sort | Y.-J. Lee |
| collection | DOAJ |
| description | An X-band high-power amplifier (HPA) based on gallium nitride (GaN) high electron mobility transistors (HEMTs) has been developed for synthetic aperture radar (SAR) applications. A hybrid power combining technique, including microstrip circuits and waveguides, is used to design the HPA. For reducing the size, four 50 W GaN HEMTs cascaded with one 1-to-4 power divider and one 4-to-1 power combiner form a 4-way power combined PCB circuits. For combing the high power and driving an antenna, two PCB circuits are combined by magic-T waveguides. The transmission efficiency of the power combining is approximately 80%. In the 10% duty cycle (pulse width 100 us), the output power of the HPA is over 200 W across the band of 9.5–9.8 GHz. The maximum output power is 230 W at 9.5 GHz, and the power gain is 8.3 dB at 46.1°C. |
| first_indexed | 2024-12-17T15:16:50Z |
| format | Article |
| id | doaj.art-389311eb3eae4808baef0076c6331ff0 |
| institution | Directory Open Access Journal |
| issn | 2119-0275 |
| language | English |
| last_indexed | 2024-12-17T15:16:50Z |
| publishDate | 2018-12-01 |
| publisher | Advanced Electromagnetics |
| record_format | Article |
| series | Advanced Electromagnetics |
| spelling | doaj.art-389311eb3eae4808baef0076c6331ff02022-12-21T21:43:30ZengAdvanced ElectromagneticsAdvanced Electromagnetics2119-02752018-12-017512413010.7716/aem.v7i5.917917X-Band GaN High-Power Amplifier Using Hybrid Power Combining Technique for SAR ApplicationsY.-J. Lee0C.-Y. Chang1Y.-H. Chou2I-Y. Tarn3J. Y.-C. Yaung4J.-H. Tarng5S.-J. Chung6National Chiao-Tung UniversityNational Chiao-Tung UniversityNational Chiao-Tung UniversityNational Space OrganizationNational Space OrganizationNational Chiao-Tung UniversityNational Chiao-Tung UniversityAn X-band high-power amplifier (HPA) based on gallium nitride (GaN) high electron mobility transistors (HEMTs) has been developed for synthetic aperture radar (SAR) applications. A hybrid power combining technique, including microstrip circuits and waveguides, is used to design the HPA. For reducing the size, four 50 W GaN HEMTs cascaded with one 1-to-4 power divider and one 4-to-1 power combiner form a 4-way power combined PCB circuits. For combing the high power and driving an antenna, two PCB circuits are combined by magic-T waveguides. The transmission efficiency of the power combining is approximately 80%. In the 10% duty cycle (pulse width 100 us), the output power of the HPA is over 200 W across the band of 9.5–9.8 GHz. The maximum output power is 230 W at 9.5 GHz, and the power gain is 8.3 dB at 46.1°C.https://aemjournal.org/index.php/AEM/article/view/917GaN HEMThigh power amplifierhybrid power combiningSARX-band |
| spellingShingle | Y.-J. Lee C.-Y. Chang Y.-H. Chou I-Y. Tarn J. Y.-C. Yaung J.-H. Tarng S.-J. Chung X-Band GaN High-Power Amplifier Using Hybrid Power Combining Technique for SAR Applications Advanced Electromagnetics GaN HEMT high power amplifier hybrid power combining SAR X-band |
| title | X-Band GaN High-Power Amplifier Using Hybrid Power Combining Technique for SAR Applications |
| title_full | X-Band GaN High-Power Amplifier Using Hybrid Power Combining Technique for SAR Applications |
| title_fullStr | X-Band GaN High-Power Amplifier Using Hybrid Power Combining Technique for SAR Applications |
| title_full_unstemmed | X-Band GaN High-Power Amplifier Using Hybrid Power Combining Technique for SAR Applications |
| title_short | X-Band GaN High-Power Amplifier Using Hybrid Power Combining Technique for SAR Applications |
| title_sort | x band gan high power amplifier using hybrid power combining technique for sar applications |
| topic | GaN HEMT high power amplifier hybrid power combining SAR X-band |
| url | https://aemjournal.org/index.php/AEM/article/view/917 |
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