A 2.8 kV Breakdown Voltage α-Ga<sub>2</sub>O<sub>3</sub> MOSFET with Hybrid Schottky Drain Contact

A 2.8 kV Breakdown Voltage α-Ga<sub>2</sub>O<sub>3</sub> MOSFET with Hybrid Schottky Drain Contact

Among various polymorphic phases of gallium oxide (Ga<sub>2</sub>O<sub>3</sub>), α-phase Ga<sub>2</sub>O<sub>3</sub> has clear advantages such as its heteroepitaxial growth as well as wide bandgap, which is promising for use in power devices. In this w...

Full description

Bibliographic Details
Main Authors: Seung Yoon Oh, Yeong Je Jeong, Inho Kang, Ji-Hyeon Park, Min Jae Yeom, Dae-Woo Jeon, Geonwook Yoo
Format: Article
Language:English
Published: MDPI AG 2024-01-01
Series:Micromachines
Subjects:
α-Ga<sub>2</sub>O<sub>3</sub>
MOSFET
hybrid Schottky drain
Ohmic drain
breakdown voltage
Online Access:https://www.mdpi.com/2072-666X/15/1/133

Internet

https://www.mdpi.com/2072-666X/15/1/133

Similar Items