Switchable‐Memory Operation of Silicon Nanowire Transistor

Switchable‐Memory Operation of Silicon Nanowire Transistor

Abstract The switchable‐memory operation of a feedback silicon nanowire transistor with a dual‐gate structure is demonstrated. The single transistor exhibits volatile memory characteristics with a retention time longer than 3600 s, as well as a switching capability with a subthreshold swing lower th...

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Bibliographic Details
Main Authors: Yoonjoong Kim, Jinsun Cho, Doohyeok Lim, Sola Woo, Kyoungah Cho, Sangsig Kim
Format: Article
Language:English
Published: Wiley-VCH 2018-12-01
Series:Advanced Electronic Materials
Subjects:
one transistor
positive feedback loop
silicon nanowires
switchable‐memory
Online Access:https://doi.org/10.1002/aelm.201800429

Internet

https://doi.org/10.1002/aelm.201800429

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