Switchable‐Memory Operation of Silicon Nanowire Transistor
Abstract The switchable‐memory operation of a feedback silicon nanowire transistor with a dual‐gate structure is demonstrated. The single transistor exhibits volatile memory characteristics with a retention time longer than 3600 s, as well as a switching capability with a subthreshold swing lower th...
| Main Authors: | , , , , , |
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| פורמט: | Article |
| שפה: | English |
| יצא לאור: |
Wiley-VCH
2018-12-01
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| סדרה: | Advanced Electronic Materials |
| נושאים: | |
| גישה מקוונת: | https://doi.org/10.1002/aelm.201800429 |