Impact on DC and analog/RF performances of SOI based GaN FinFET considering high-k gate oxide
This paper suggests an analysis of SOI-based GaN FinFET that considers high-k gate oxide into account. The effect of using SOI substrate and a high-k dielectric layer on ON current, OFF current, electric field, electron mobility, conduction & valence band energy, and subthreshold swing is re...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2023-10-01
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| Series: | Memories - Materials, Devices, Circuits and Systems |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2773064623000567 |