Effect of Step Gate Work Function on InGaAs p-TFET for Low Power Switching Applications

Effect of Step Gate Work Function on InGaAs p-TFET for Low Power Switching Applications

In this study, we theoretically investigated the effect of step gate work function on the InGaAs p-TFET device, which is formed by dual material gate (DMG). We analyzed the performance parameters of the device for low power digital and analog applications based on the gate work function difference (...

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Bibliographic Details
Main Authors: Sayed Md Tariful Azam, Abu Saleh Md Bakibillah, Md Tanvir Hasan, Md Abdus Samad Kamal
Format: Article
Language:English
Published: MDPI AG 2021-11-01
Series:Nanomaterials
Subjects:
p-TFET
gate work function
dual material gate
InGaAs
low power switching
Online Access:https://www.mdpi.com/2079-4991/11/12/3166

Internet

https://www.mdpi.com/2079-4991/11/12/3166

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