Low-Frequency Noise Characteristics of (Al, Ga)As and Ga(As, Bi) Quantum Well Structures for NIR Laser Diodes

Low-Frequency Noise Characteristics of (Al, Ga)As and Ga(As, Bi) Quantum Well Structures for NIR Laser Diodes

Fabry–Perot laser diodes based on (Al, Ga)As and Ga(As, Bi) with single or multiple parabolic or rectangular-shaped quantum wells (QWs) emitting at the 780–1100 nm spectral range were fabricated and investigated for optimization of the laser QW design and composition of QWs. The laser structures wer...

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Bibliographic Details
Main Authors: Simona Armalytė, Justinas Glemža, Vytautas Jonkus, Sandra Pralgauskaitė, Jonas Matukas, Simona Pūkienė, Andrea Zelioli, Evelina Dudutienė, Arnas Naujokaitis, Andrius Bičiūnas, Bronislovas Čechavičius, Renata Butkutė
Format: Article
Language:English
Published: MDPI AG 2023-02-01
Series:Sensors
Subjects:
electrical noise
fluctuation
optical noise
laser diode
parabolic QW
rectangular QW
Online Access:https://www.mdpi.com/1424-8220/23/4/2282

Internet

https://www.mdpi.com/1424-8220/23/4/2282

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