Low-Frequency Noise Characteristics of (Al, Ga)As and Ga(As, Bi) Quantum Well Structures for NIR Laser Diodes
Fabry–Perot laser diodes based on (Al, Ga)As and Ga(As, Bi) with single or multiple parabolic or rectangular-shaped quantum wells (QWs) emitting at the 780–1100 nm spectral range were fabricated and investigated for optimization of the laser QW design and composition of QWs. The laser structures wer...
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-02-01
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| Series: | Sensors |
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| Online Access: | https://www.mdpi.com/1424-8220/23/4/2282 |
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| author | Simona Armalytė Justinas Glemža Vytautas Jonkus Sandra Pralgauskaitė Jonas Matukas Simona Pūkienė Andrea Zelioli Evelina Dudutienė Arnas Naujokaitis Andrius Bičiūnas Bronislovas Čechavičius Renata Butkutė |
| author_facet | Simona Armalytė Justinas Glemža Vytautas Jonkus Sandra Pralgauskaitė Jonas Matukas Simona Pūkienė Andrea Zelioli Evelina Dudutienė Arnas Naujokaitis Andrius Bičiūnas Bronislovas Čechavičius Renata Butkutė |
| author_sort | Simona Armalytė |
| collection | DOAJ |
| description | Fabry–Perot laser diodes based on (Al, Ga)As and Ga(As, Bi) with single or multiple parabolic or rectangular-shaped quantum wells (QWs) emitting at the 780–1100 nm spectral range were fabricated and investigated for optimization of the laser QW design and composition of QWs. The laser structures were grown using the molecular beam epitaxy (MBE) technique on the <i>n</i>-type GaAs(100) substrate. The photolithography process was performed to fabricate edge-emitting laser bars of 5 μm by 500 μm in size. The temperature-dependent power-current measurements showed that the characteristic threshold current of the fabricated LDs was in the 60–120 mA range. Light and current characteristics were almost linear up to (1.2–2.0) <i>I</i><sub>th</sub>. Low-frequency 10 Hz–20 kHz electrical and optical noise characteristics were measured in the temperature range from 70 K to 290 K and showed that the low-frequency optical and electrical noise spectra are comprised of 1/<i>f</i> and Lorentzian-type components. The positive cross-correlation between optical and electrical fluctuations was observed. |
| first_indexed | 2024-03-11T08:09:41Z |
| format | Article |
| id | doaj.art-38f3c98179fc453ca959d0c2a2279eb8 |
| institution | Directory Open Access Journal |
| issn | 1424-8220 |
| language | English |
| last_indexed | 2024-03-11T08:09:41Z |
| publishDate | 2023-02-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Sensors |
| spelling | doaj.art-38f3c98179fc453ca959d0c2a2279eb82023-11-16T23:12:45ZengMDPI AGSensors1424-82202023-02-01234228210.3390/s23042282Low-Frequency Noise Characteristics of (Al, Ga)As and Ga(As, Bi) Quantum Well Structures for NIR Laser DiodesSimona Armalytė0Justinas Glemža1Vytautas Jonkus2Sandra Pralgauskaitė3Jonas Matukas4Simona Pūkienė5Andrea Zelioli6Evelina Dudutienė7Arnas Naujokaitis8Andrius Bičiūnas9Bronislovas Čechavičius10Renata Butkutė11Institute of Applied Electrodynamics and Telecommunications, Faculty of Physics, Vilnius University, Saulėtekio Av. 3, LT-10257 Vilnius, LithuaniaInstitute of Applied Electrodynamics and Telecommunications, Faculty of Physics, Vilnius University, Saulėtekio Av. 3, LT-10257 Vilnius, LithuaniaInstitute of Applied Electrodynamics and Telecommunications, Faculty of Physics, Vilnius University, Saulėtekio Av. 3, LT-10257 Vilnius, LithuaniaInstitute of Applied Electrodynamics and Telecommunications, Faculty of Physics, Vilnius University, Saulėtekio Av. 3, LT-10257 Vilnius, LithuaniaInstitute of Applied Electrodynamics and Telecommunications, Faculty of Physics, Vilnius University, Saulėtekio Av. 3, LT-10257 Vilnius, LithuaniaDepartment of Optoelectronics, Center for Physical Sciences and Technology, Saulėtekio Av. 3, LT-10257 Vilnius, LithuaniaDepartment of Optoelectronics, Center for Physical Sciences and Technology, Saulėtekio Av. 3, LT-10257 Vilnius, LithuaniaDepartment of Optoelectronics, Center for Physical Sciences and Technology, Saulėtekio Av. 3, LT-10257 Vilnius, LithuaniaDepartment of Optoelectronics, Center for Physical Sciences and Technology, Saulėtekio Av. 3, LT-10257 Vilnius, LithuaniaDepartment of Optoelectronics, Center for Physical Sciences and Technology, Saulėtekio Av. 3, LT-10257 Vilnius, LithuaniaDepartment of Optoelectronics, Center for Physical Sciences and Technology, Saulėtekio Av. 3, LT-10257 Vilnius, LithuaniaDepartment of Optoelectronics, Center for Physical Sciences and Technology, Saulėtekio Av. 3, LT-10257 Vilnius, LithuaniaFabry–Perot laser diodes based on (Al, Ga)As and Ga(As, Bi) with single or multiple parabolic or rectangular-shaped quantum wells (QWs) emitting at the 780–1100 nm spectral range were fabricated and investigated for optimization of the laser QW design and composition of QWs. The laser structures were grown using the molecular beam epitaxy (MBE) technique on the <i>n</i>-type GaAs(100) substrate. The photolithography process was performed to fabricate edge-emitting laser bars of 5 μm by 500 μm in size. The temperature-dependent power-current measurements showed that the characteristic threshold current of the fabricated LDs was in the 60–120 mA range. Light and current characteristics were almost linear up to (1.2–2.0) <i>I</i><sub>th</sub>. Low-frequency 10 Hz–20 kHz electrical and optical noise characteristics were measured in the temperature range from 70 K to 290 K and showed that the low-frequency optical and electrical noise spectra are comprised of 1/<i>f</i> and Lorentzian-type components. The positive cross-correlation between optical and electrical fluctuations was observed.https://www.mdpi.com/1424-8220/23/4/2282electrical noisefluctuationoptical noiselaser diodeparabolic QWrectangular QW |
| spellingShingle | Simona Armalytė Justinas Glemža Vytautas Jonkus Sandra Pralgauskaitė Jonas Matukas Simona Pūkienė Andrea Zelioli Evelina Dudutienė Arnas Naujokaitis Andrius Bičiūnas Bronislovas Čechavičius Renata Butkutė Low-Frequency Noise Characteristics of (Al, Ga)As and Ga(As, Bi) Quantum Well Structures for NIR Laser Diodes Sensors electrical noise fluctuation optical noise laser diode parabolic QW rectangular QW |
| title | Low-Frequency Noise Characteristics of (Al, Ga)As and Ga(As, Bi) Quantum Well Structures for NIR Laser Diodes |
| title_full | Low-Frequency Noise Characteristics of (Al, Ga)As and Ga(As, Bi) Quantum Well Structures for NIR Laser Diodes |
| title_fullStr | Low-Frequency Noise Characteristics of (Al, Ga)As and Ga(As, Bi) Quantum Well Structures for NIR Laser Diodes |
| title_full_unstemmed | Low-Frequency Noise Characteristics of (Al, Ga)As and Ga(As, Bi) Quantum Well Structures for NIR Laser Diodes |
| title_short | Low-Frequency Noise Characteristics of (Al, Ga)As and Ga(As, Bi) Quantum Well Structures for NIR Laser Diodes |
| title_sort | low frequency noise characteristics of al ga as and ga as bi quantum well structures for nir laser diodes |
| topic | electrical noise fluctuation optical noise laser diode parabolic QW rectangular QW |
| url | https://www.mdpi.com/1424-8220/23/4/2282 |
| work_keys_str_mv | AT simonaarmalyte lowfrequencynoisecharacteristicsofalgaasandgaasbiquantumwellstructuresfornirlaserdiodes AT justinasglemza lowfrequencynoisecharacteristicsofalgaasandgaasbiquantumwellstructuresfornirlaserdiodes AT vytautasjonkus lowfrequencynoisecharacteristicsofalgaasandgaasbiquantumwellstructuresfornirlaserdiodes AT sandrapralgauskaite lowfrequencynoisecharacteristicsofalgaasandgaasbiquantumwellstructuresfornirlaserdiodes AT jonasmatukas lowfrequencynoisecharacteristicsofalgaasandgaasbiquantumwellstructuresfornirlaserdiodes AT simonapukiene lowfrequencynoisecharacteristicsofalgaasandgaasbiquantumwellstructuresfornirlaserdiodes AT andreazelioli lowfrequencynoisecharacteristicsofalgaasandgaasbiquantumwellstructuresfornirlaserdiodes AT evelinadudutiene lowfrequencynoisecharacteristicsofalgaasandgaasbiquantumwellstructuresfornirlaserdiodes AT arnasnaujokaitis lowfrequencynoisecharacteristicsofalgaasandgaasbiquantumwellstructuresfornirlaserdiodes AT andriusbiciunas lowfrequencynoisecharacteristicsofalgaasandgaasbiquantumwellstructuresfornirlaserdiodes AT bronislovascechavicius lowfrequencynoisecharacteristicsofalgaasandgaasbiquantumwellstructuresfornirlaserdiodes AT renatabutkute lowfrequencynoisecharacteristicsofalgaasandgaasbiquantumwellstructuresfornirlaserdiodes |