Investigation of 1/<i>f</i> and Lorentzian Noise in TMAH-treated Normally-Off GaN MISFETs

Investigation of 1/<i>f</i> and Lorentzian Noise in TMAH-treated Normally-Off GaN MISFETs

A tetramethyl ammonium hydroxide (TMAH)-treated normally-off Gallum nitride (GaN) metal-insulator-semiconductor field-effect transistor (MISFET) was fabricated and characterized using low-frequency noise (LFN) measurements in order to find the conduction mechanism and analyze the trapping behavior i...

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Bibliographic Details
Main Authors: Ki-Sik Im, Mallem Siva Pratap Reddy, Yeo Jin Choi, Youngmin Hwang, Sung Jin An, Jea-Seung Roh
Format: Article
Language:English
Published: MDPI AG 2020-08-01
Series:Crystals
Subjects:
GaN
MISFET
normally-off
1/<i>f</i> noise
g-r noise
correlated mobility fluctuations
Online Access:https://www.mdpi.com/2073-4352/10/8/717

Internet

https://www.mdpi.com/2073-4352/10/8/717

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