Investigation of 1/<i>f</i> and Lorentzian Noise in TMAH-treated Normally-Off GaN MISFETs
A tetramethyl ammonium hydroxide (TMAH)-treated normally-off Gallum nitride (GaN) metal-insulator-semiconductor field-effect transistor (MISFET) was fabricated and characterized using low-frequency noise (LFN) measurements in order to find the conduction mechanism and analyze the trapping behavior i...
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MDPI AG
2020-08-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/10/8/717 |
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| author | Ki-Sik Im Mallem Siva Pratap Reddy Yeo Jin Choi Youngmin Hwang Sung Jin An Jea-Seung Roh |
| author_facet | Ki-Sik Im Mallem Siva Pratap Reddy Yeo Jin Choi Youngmin Hwang Sung Jin An Jea-Seung Roh |
| author_sort | Ki-Sik Im |
| collection | DOAJ |
| description | A tetramethyl ammonium hydroxide (TMAH)-treated normally-off Gallum nitride (GaN) metal-insulator-semiconductor field-effect transistor (MISFET) was fabricated and characterized using low-frequency noise (LFN) measurements in order to find the conduction mechanism and analyze the trapping behavior into the gate insulator as well as the GaN buffer layer. At the on-state, the noise spectra in the fabricated GaN device were 1/<i>f</i><sup>γ</sup> properties with γ ≈ 1, which is explained by correlated mobility fluctuations (CMF). On the other hand, the device exhibited Lorentzian or generation-recombination (g-r) noises at the off-state due to deep-level trapping/de-trapping into the GaN buffer layer. The trap time constants (τ<sub>i</sub>) calculated from the g-r noises became longer when the drain voltage increased up to 5 V, which was attributed to deep-level traps rather than shallow traps. The severe drain lag was also investigated from pulsed I-V measurement, which is supported by the noise behavior observed at the off-state. |
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| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-10T17:13:57Z |
| publishDate | 2020-08-01 |
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| spelling | doaj.art-3917b468edaa4f7189405f2b42264df12023-11-20T10:33:15ZengMDPI AGCrystals2073-43522020-08-0110871710.3390/cryst10080717Investigation of 1/<i>f</i> and Lorentzian Noise in TMAH-treated Normally-Off GaN MISFETsKi-Sik Im0Mallem Siva Pratap Reddy1Yeo Jin Choi2Youngmin Hwang3Sung Jin An4Jea-Seung Roh5Advanced Material Research Center, Kumoh National Institute of Technology, Gumi 39177, KoreaSchool of Electronics Engineering, Kyungpook National University, Daegu 41566, KoreaDepartment of Advanced Materials Science and Engineering, Kumoh National Institute of Technology, Gumi 39177, KoreaAdvanced Material Research Center, Kumoh National Institute of Technology, Gumi 39177, KoreaDepartment of Advanced Materials Science and Engineering, Kumoh National Institute of Technology, Gumi 39177, KoreaDepartment of Advanced Materials Science and Engineering, Kumoh National Institute of Technology, Gumi 39177, KoreaA tetramethyl ammonium hydroxide (TMAH)-treated normally-off Gallum nitride (GaN) metal-insulator-semiconductor field-effect transistor (MISFET) was fabricated and characterized using low-frequency noise (LFN) measurements in order to find the conduction mechanism and analyze the trapping behavior into the gate insulator as well as the GaN buffer layer. At the on-state, the noise spectra in the fabricated GaN device were 1/<i>f</i><sup>γ</sup> properties with γ ≈ 1, which is explained by correlated mobility fluctuations (CMF). On the other hand, the device exhibited Lorentzian or generation-recombination (g-r) noises at the off-state due to deep-level trapping/de-trapping into the GaN buffer layer. The trap time constants (τ<sub>i</sub>) calculated from the g-r noises became longer when the drain voltage increased up to 5 V, which was attributed to deep-level traps rather than shallow traps. The severe drain lag was also investigated from pulsed I-V measurement, which is supported by the noise behavior observed at the off-state.https://www.mdpi.com/2073-4352/10/8/717GaNMISFETnormally-off1/<i>f</i> noiseg-r noisecorrelated mobility fluctuations |
| spellingShingle | Ki-Sik Im Mallem Siva Pratap Reddy Yeo Jin Choi Youngmin Hwang Sung Jin An Jea-Seung Roh Investigation of 1/<i>f</i> and Lorentzian Noise in TMAH-treated Normally-Off GaN MISFETs Crystals GaN MISFET normally-off 1/<i>f</i> noise g-r noise correlated mobility fluctuations |
| title | Investigation of 1/<i>f</i> and Lorentzian Noise in TMAH-treated Normally-Off GaN MISFETs |
| title_full | Investigation of 1/<i>f</i> and Lorentzian Noise in TMAH-treated Normally-Off GaN MISFETs |
| title_fullStr | Investigation of 1/<i>f</i> and Lorentzian Noise in TMAH-treated Normally-Off GaN MISFETs |
| title_full_unstemmed | Investigation of 1/<i>f</i> and Lorentzian Noise in TMAH-treated Normally-Off GaN MISFETs |
| title_short | Investigation of 1/<i>f</i> and Lorentzian Noise in TMAH-treated Normally-Off GaN MISFETs |
| title_sort | investigation of 1 i f i and lorentzian noise in tmah treated normally off gan misfets |
| topic | GaN MISFET normally-off 1/<i>f</i> noise g-r noise correlated mobility fluctuations |
| url | https://www.mdpi.com/2073-4352/10/8/717 |
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